Investigations of the n-GaAs-electrolyte interface using time-resolved photoluminescence
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference47 articles.
1. Measurement of Diffusion Lengths in Direct‐Gap Semiconductors by Electron‐Beam Excitation
2. Photoluminescence as a tool for the study of the electronic surface properties of gallium arsenide
3. Photoluminescent properties ofn‐GaAs electrodes: Applications of the dead‐layer model to photoelectrochemical cells
4. Photoluminescent properties ofn‐GaAs electrodes: Simultaneous determination of depletion widths and surface hole‐capture velocities in photoelectrochemical cells
5. Photoluminescent properties ofp‐GaAs electrodes related to the ‘‘photocurrent anomaly’’: Determination of surface electron‐capture velocities and depletion widths in photoelectrochemical cells
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Conditions Under Which Heterogeneous Charge-Transfer Rate Constants Can Be Extracted from Transient Photoluminescence Decay Data of Semiconductor/Liquid Contacts As Determined by Two-Dimensional Transport Modeling;The Journal of Physical Chemistry B;1998-06-25
2. On the dependence of the photoluminescence decay on the externally applied potential at the junction n-GaAs/1 M HCl;Berichte der Bunsengesellschaft für physikalische Chemie;1994-08
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