Deep hole injection assisted by large V-shape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes
Author:
Funder
National High Technology Research and Development Program of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4896362
Reference35 articles.
1. Impact of temperature-dependent hole injection on low-temperature electroluminescence collapse in ultraviolet light-emitting diodes
2. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
3. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
4. Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
5. Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers
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