Mechanisms of GaN quantum dot formation during nitridation of Ga droplets-Reference-Cited by-同舟云学术

Mechanisms of GaN quantum dot formation during nitridation of Ga droplets

Published:2020-02-10 Issue:6 Volume:116 Page:062107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lu H.¹^ORCID,Reese C.¹^ORCID,Jeon S.¹,Sundar A.¹,Fan Y.²,Rizzi E.¹,Zhuo Y.²,Qi L.¹^ORCID,Goldman R. S.¹³^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136, USA

2. Key Laboratory for Thermal Science and Power Engineering of the Ministry of Education, Department of Energy and Power Engineering, Tsinghua University, Beijing 100084, China

3. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136, USA

Funder

National Science Foundation

China National Natural Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5133965

Reference33 articles.

1. A Multilevel Intermediate-Band Solar Cell by InGaN/GaN Quantum Dots with a Strain-Modulated Structure

2. Theoretical study on InxGa1−xN/GaN quantum dots solar cell

3. From visible to white light emission by GaN quantum dots on Si(111) substrate

4. High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD

5. InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop

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