Simulation of GaN Nanocluster Droplet Epitaxy on Si(111) Substrate-Reference-Cited by-同舟云学术

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Simulation of GaN Nanocluster Droplet Epitaxy on Si(111) Substrate

Published:2023-06-29 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM)
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Author:

Litvinenko Maria A.¹,Nastovjak Alla G.²,Shwartz Nataliya L.²

Affiliation:

1. Rzhanov Institute of Semiconductor Physics, Novosibirsk State Technical University,SB RAS Radio Engineering and Electronics department,Novosibirsk,Russia

2. Novosibirsk State Technical University, Rzhanov Institute of Semiconductor Physics, SB RAS,Novosibirsk,Russia

Funder

Ministry of Education and Science of the Russian Federation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10224902/10225012/10225055.pdf?arnumber=10225055

Reference21 articles.

1. Crystal Structures of GaN Nanodots by Nitrogen Plasma Treatment on Ga Metal Droplets

2. Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy

3. Real-time x-ray studies of gallium nitride nanodot formation by droplet heteroepitaxy

4. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy

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