Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films-Reference-Cited by-同舟云学术

Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

Published:2017-07 Issue:7 Volume:7 Page:075309
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Chou Chia-Man¹,Lai Chih-Chang²,Chang Chih-Wei³,Wen Kai-Hsin³,Hsiao Vincent K. S.³

Affiliation:

1. Division of Pediatric Surgery, Department of Surgery, Taichung Veterans General Hospital, Taichung, Taiwan, 40705 and Department of Medicine, National Yang-Ming University, Taipei, Taiwan, 112

2. Graduate Program of Optoelectronic Technology, National Chi Nan University, Nantou, Taiwan, 54561

3. Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou, Taiwan, 54561

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4994677

Reference44 articles.

1. Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

4. Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors

5. The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

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