1. High dielectric constant gate oxides for metal oxide Si transistors
2. Roadmap for 22nm and beyond (Invited Paper)
3. Gate stack technology for nanoscale devices
4. Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges
5. J. K. Schaeffer, C. Capasso, L. R. C. Fonseca, S. Samavedam, D. C. Gilmer, Y. Liang, S. Kalpat, B. Adetutu, H.H. Tseng, Y. Shiho, A. Demkov, R. Hegde, W. J. Taylor, R. Gregory, J. Jiang, E. Luckowski, M. V. Raymond, K. Moore, D. Triyoso, D. Roan, B. E. White Jr Jr, and P. J. Tobin, Tech. Dig. Int. Electron Devices Meet. (IEEE, New York, 2004) p. 287.