Molecular dynamics simulations of the solid phase epitaxy of Si: Growth mechanism and orientation effects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3211972
Reference20 articles.
1. Kinetics of solid phase crystallization in amorphous silicon
2. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
3. Some observations on the amorphous to crystalline transformation in silicon
4. Intrinsic and dopant-enhanced solid-phase epitaxy in amorphous germanium
5. Diffusion of boron in silicon: Compatibility of empirical molecular dynamics with continuum simulations
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