Non-volatile resistive switching in CuBi-based conductive bridge random access memory device
Author:
Affiliation:
1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea
2. Department of Applied Physics, Korea University, 2511, Sejongro, Sejong 339-700, South Korea
Funder
National Research Foundation of Korea
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5030765
Reference38 articles.
1. Nanoionics-based resistive switching memories
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5. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
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