Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2172719
Reference28 articles.
1. Electronic Properties of Ga(In)NAs Alloys
2. Bowing parameter of the band-gap energy of GaNxAs1−x
3. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
4. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
5. Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction inGaAs1−xNxwithx<0.03
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