High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication-Reference-Cited by-同舟云学术

High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

Author:

Pham T. T.¹²³,Gutiérrez M.⁴^ORCID,Masante C.¹²³,Rouger N.⁵^ORCID,Eon D.¹²,Gheeraert E.¹²⁶^ORCID,Araùjo D.⁴,Pernot J.¹²⁷^ORCID

Affiliation:

1. Univ. Grenoble Alpes, F-38042 Grenoble, France

2. CNRS, Inst. NEEL, F-38042 Grenoble, France

3. CNRS, G2Elab, F-38042 Grenoble, France

4. Dpto. de Ciencia de los Materiales e I.M. y Q.I., Universidad de Cádiz, C.P. 11510 Puerto Real-Cádiz, Spain

5. LAPLACE, Université de Toulouse, CNRS, Toulouse, France

6. University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8573, Japan

7. Institut Universitaire de France, 103 boulevard Saint Michel, 75005 Paris, France

Funder

European Commission

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference18 articles.

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