Dielectric relaxation of lanthanum doped zirconium oxide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3078038
Reference41 articles.
1. HfTiAlO dielectric as an alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices
2. Effect of low fluence laser annealing on ultrathin Lu2O3 high-k dielectric
3. Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high-κ films prepared by molecular beam deposition
4. Structural and dielectric properties of crystalline and amorphous ZrO2
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