Characterization of GaAs/InGaAs quantum wells using photocurrent spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362383
Reference15 articles.
1. On the mechanisms of strain release in molecular‐beam‐epitaxy‐grown InxGa1−xAs/GaAs single heterostructures
2. MOVPE grown MQW pin diodes for electro-optic modulators and photodiodes with enhanced electron ionisation coefficient
3. Reflection high‐energy electron diffraction and optical measurements on the molecular‐beam epitaxial growth of one and two monolayers of InAs on GaAs
4. Barrier width dependence of leakage currents in InGaAs/ GaAs multiple quantum well P-I-N diodes
5. Enhanced breakdown voltages in strained InGaAs/GaAs structures
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