AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy-Reference-Cited by-同舟云学术

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

Published:2011-04-18 Issue:16 Volume:98 Page:162112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hirama Kazuyuki,Taniyasu Yoshitaka,Kasu Makoto

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3574531

Reference17 articles.

1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

2. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

3. An insulator-lined silicon substrate-via technology with high aspect ratio

4. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs

5. 30-W/mm GaN HEMTs by Field Plate Optimization

Cited by 77 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The enhanced GaN deposition on highly N-incorporated diamond substrate;Materials Letters;2024-09

2. Understanding of multiway heat extraction using peripheral diamond in an AlGaN/GaN high electron mobility transistor by electrothermal simulations;Semiconductor Science and Technology;2024-06-07

3. Fabrication of low thermal resistance 3C-SiC/diamond structure for GaN epitaxial layer growth;Functional Diamond;2024-04-12

4. Diamond-SiC composite substrates: A novel strategy as efficient heat sinks for GaN-based devices;Carbon;2024-01

5. Direct Bonding of Diamond and Dissimilar Materials for Fabricating High Performace Power Devices;Topics in Applied Physics;2024