Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si-Reference-Cited by-同舟云学术

Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si

Published:2018-09 Issue:9 Volume:6 Page:096102
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Polyakov A. Y.¹,Smirnov N. B.¹,Shchemerov I. V.¹,Pearton S. J.²^ORCID,Ren F.³^ORCID,Chernykh A. V.¹⁴^ORCID,Lagov P. B.¹⁵,Kulevoy T. V.⁶

Affiliation:

1. National University of Science and Technology MISiS, 4 Leninsky Ave., Moscow 194017, Russia

2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

3. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA

4. Pulsar Scientific and Production Enterprise, Joint Stock Company, Okruzhnoy Way, House 27, Moscow 105187, Russia

5. Laboratory of Radiation Technologies, A. N. Frumkin Institute of Physical Chemistry and Electrochemistry Russian Academy of Sciences (IPSE RAS), 31 Leninsky Ave., Moscow 119071, Russia

6. Institute of Theoretical and Experimental Physics Russian Academy of Science (ITEP RAS), 25 B. Cheremushkinskaya St., Moscow 117218, Russia

Funder

Defense Threat Reduction Agency

Ministry of Education and Science of the Russian Federation

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5042646

Reference31 articles.

1. Perspective—Opportunities and Future Directions for Ga2O3

2. B. Bayraktaroglu, “Assessment of Ga2O3 technology,” Report No. AFRL-RY-WP-TR-2017-0167, Air Force Research Lab, Devices for Sensing Branch, Aerospace Components & Subsystems Division, 2017.

3. Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

4. Homo- and heteroepitaxial growth of Sn-doped β-Ga2O3 layers by MOVPE

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