The role of Si vacancies in the segregation of O, C, and N at silicon grain boundaries: An ab initio study-Reference-Cited by-同舟云学术

The role of Si vacancies in the segregation of O, C, and N at silicon grain boundaries: An ab initio study

Published:2021-11-07 Issue:17 Volume:155 Page:174704
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:J. Chem. Phys.

Author:

Maji Rita¹²,Contreras-García Julia³,Capron Nathalie⁴,Degoli Elena¹²⁵⁶^ORCID,Luppi Eleonora³^ORCID

Affiliation:

1. Dipartimento di Scienze e Metodi dell’Ingegneria, Università di Modena e Reggio Emilia, Via Amendola 2 Padiglione Tamburini, I-42122 Reggio Emilia, Italy

2. Centro Interdipartimentale En&Tech, Via Amendola 2, I-42122 Reggio Emilia, Italy

3. Laboratoire de Chimie Théorique, Sorbonne Université and CNRS, F-75005 Paris, France

4. Sorbonne Université, CNRS, Laboratoire de Chimie Physique Matière et Rayonnement, UMR 7614, F-75005 Paris, France

5. Centro Interdipartimentale En&Tech, Via Amendola 2 Padiglione Morselli, I-42122 Reggio Emilia, Italy

6. Centro S3, Istituto Nanoscienze-Consiglio Nazionale delle Ricerche (CNR-NANO), Via Campi 213/A, 41125 Modena, Italy

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0067252

Reference49 articles.

1. The path to 25% silicon solar cell efficiency: History of silicon cell evolution

2. New processes for the production of solar-grade polycrystalline silicon: A review

3. Thin-film silicon solar cell technology

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5. Effect of grain size and dislocation density on the performance of thin film polycrystalline silicon solar cells

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