Raman spectra of individual Si thin layers with 4–40 atomic layer thicknesses buried in GaAs (001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107117
Reference16 articles.
1. Growth and properties of single domain GaAs, AlGaAs and their heterostructures on Si by MOCVD and MBE
2. Characterization of GaAs grown on Si epitaxial layers on GaAs substrates
3. Characterization of an individual Si thin layer buried in GaAs (001) using Raman spectroscopy
4. Highly Sensitive Raman Spectroscopy by a Position-Sensitive Photomultiplier and a Triple-Stage Spectrograph with Stigmatic Optical Correction
5. Effect of static uniaxial stress on the Raman spectrum of silicon
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2. Depth profiles of spatially‐resolved Raman spectra of a CuInSe2‐based thin‐film solar cell;Journal of Applied Physics;1996-03
3. Theory of Si δ-Doped GaAs;Materials Science Forum;1995-11
4. Infrared and Raman Studies of Si Delta-Doped (100) GaAs Grown by MBE at 400°C on c(4x4) Surfaces;Materials Science Forum;1995-11
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