Silicon incorporation in GaAs: From delta‐doping to monolayer insertion
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360165
Reference18 articles.
1. The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering
2. Heavily Si or Be doped MBE GaAs grown at low temperatures
3. Post-growth diffusion of Si in delta -doped GaAs grown by MBE
4. The lattice locations of silicon atoms in delta‐doped layers in GaAs
5. Incorporation of Si in δ‐doped GaAs studied by local vibrational mode spectroscopy
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3. Distribution and pairing up of ionized impurities in epitaxially realized semiconductor heterostructures;Physical Review B;2006-06-28
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