Effect of source-gate spacing on direct current and radio frequency characteristic of graphene field effect transistor-Reference-Cited by-同舟云学术

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Effect of source-gate spacing on direct current and radio frequency characteristic of graphene field effect transistor

Published:2015-01-19 Issue:3 Volume:106 Page:033503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Peng Song-ang¹,Jin Zhi¹,Peng-Ma ¹,Zhang Da-yong¹,Shi Jing-yuan¹,Wang Xuan-yun¹,Wang Shao-qing¹,Mei-Li ¹,Liu Xin-yu¹,Yu Guang-hui²

Affiliation:

1. Department of Microwave Devices and Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

2. Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Funder

National Science and Technology Major Project

National Natural Science Foundation of China (NSFC)

Chinese Academy of Sciences (CAS)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4906350

Reference20 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The rise of graphene

3. A Graphene Field-Effect Device

4. Graphene transistors

5. Operation of Graphene Transistors at Gigahertz Frequencies

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