Recovering the Intrinsic Electrical Property of a Graphene Field-Effect Transistor by Interface Cleaning Technology-Reference-Cited by-同舟云学术

Recovering the Intrinsic Electrical Property of a Graphene Field-Effect Transistor by Interface Cleaning Technology

Published:2023-06-09 Issue:6 Volume:5 Page:3113-3119
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Yan Yunpeng¹²,Peng Songang¹³^ORCID,Jin Zhi¹,Zhang Dayong¹³^ORCID,Shi Jingyuan¹

Affiliation:

1. High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China

Funder

Ministry of Science and Technology of the People's Republic of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00187

Reference33 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Reduction of hole doping of chemical vapor deposition grown graphene by photoresist selection and thermal treatment

3. Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process

4. Characterization and electrolytic cleaning of poly(methyl methacrylate) residues on transferred chemical vapor deposited graphene

5. The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

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