The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2-Reference-Cited by-同舟云学术

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The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

Published:2011-09-19 Issue:12 Volume:99 Page:122108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pirkle A.,Chan J.,Venugopal A.,Hinojos D.,Magnuson C. W.,McDonnell S.,Colombo L.,Vogel E. M.,Ruoff R. S.,Wallace R. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3643444

Reference21 articles.

1. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

2. Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process

3. Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization

4. Large-scale graphitic thin films synthesized on Ni and transferred to insulators: Structural and electronic properties

5. Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition

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