Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process-Reference-Cited by-同舟云学术

Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process

Published:2014-06-02 Issue:22 Volume:104 Page:224102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nath A.¹,Koehler A. D.²,Jernigan G. G.²,Wheeler V. D.²,Hite J. K.²,Hernández S. C.²,Robinson Z. R.²,Garces N. Y.³,Myers-Ward R. L.²,Eddy C. R.²,Gaskill D. K.²,Rao M. V.¹

Affiliation:

1. George Mason University, 4400 University Dr., Fairfax, Virginia 22030, USA

2. U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, D.C. 20375, USA

3. Sotera Defense Solutions, 2200 Defense Hwy. Suite 405, Crofton, Maryland 21114, USA

Funder

Office of Naval Research (ONR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4880937

Reference24 articles.

1. The rise of graphene

2. Graphene Annealing: How Clean Can It Be?

3. Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point

4. Atomic Structure of Graphene on SiO2

5. Current-induced cleaning of graphene

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