Affiliation:
1. State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China
2. Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing China
Abstract
AbstractA graphene field‐effect transistor (GFET) based on chemical vapour deposited (CVD) Ge‐based graphene was reported and the low‐temperature electrical characteristics primarily investigated. The self‐alignment technique was used to fabricate a GFET to reduce parasitic effects and improve transconductance and cut‐off frequency. To further explore the electrical properties, the direct current and radio frequency characteristics of the GFET were studied over a temperature range from 4.2 to 300 K, considering the temperature‐dependent resistivity of intrinsic Ge. The direct current characteristic of the GFET for 110‐nm gate length, particularly the transconductance performance, exhibits a tiny variation of only 5% across this temperature range. However, the cut‐off frequency experiences a considerable increase, improving several tens of times when the temperature decreases to 4.2 K, with a maximum value of 3.49 GHz. This work illustrates a meaningful advancement in applying GFETs in the low‐temperature, high‐frequency domain.
Publisher
Institution of Engineering and Technology (IET)