Epitaxial graphene/Ge interfaces: a minireview-Reference-Cited by-同舟云学术

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Epitaxial graphene/Ge interfaces: a minireview

Published:2020 Issue:21 Volume:12 Page:11416-11426
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Dedkov Yuriy¹²³⁴⁵^ORCID,Voloshina Elena¹²³⁴⁵^ORCID

Affiliation:

1. Department of Physics

2. Shanghai University

3. 200444 Shanghai

4. P. R. China

5. Institute of Physical and Organic Chemistry

Abstract

This review highlights recent progress in the studies of the growth and electronic properties of epitaxial graphene on Ge surfaces.

Funder

National Natural Science Foundation of China

Ministry of Science and Higher Education of the Russian Federation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR00185F

Reference98 articles.

1. The Band Theory of Graphite

2. Condensed-Matter Simulation of a Three-Dimensional Anomaly

3. Quantized magnetic susceptibility in (2+1)-dimensional gapless semiconductors

4. Existence of Long-Range Order in One and Two Dimensions

5. Crystalline Order in Two Dimensions

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1. Ge‐based graphene FET for low‐temperature electronics;Electronics Letters;2024-07

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