High field density-functional-theory based Monte Carlo: 4H-SiC impact ionization and velocity saturation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3074107
Reference29 articles.
1. Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]
2. A Physical Model of High Temperature 4H-SiC MOSFETs
3. Energy- and Time-Dependent Dynamics of Trap Occupation in 4H-SiC MOSFETs
4. Turn-on process in 4H-SiC thyristors
5. Comparison of 4H-SiC impact ionization models using experiments and self-consistent simulations
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1. Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC;Materials Science in Semiconductor Processing;2024-04
2. Simulation of avalanche time in thin GaN/4H–SiC heterojunction avalanche photodiodes;Journal of Computational Electronics;2024-03-08
3. Analysis of uniaxial stress impact on drift velocity of 4H-SiC by full-band Monte Carlo simulation;Solid-State Electronics;2023-01
4. Group velocity of electrons in 4H-SiC from Density Functional Theory simulations;Solid-State Electronics;2022-08
5. Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport;2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2021-09-27
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