p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes
Author:
Affiliation:
1. Institute of Electrical and Micro Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Funder
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
Electronic Components and Systems for European Leadership
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0074543
Reference32 articles.
1. GaN-on-Si Power Technology: Devices and Applications
2. The 2018 GaN power electronics roadmap
3. GaN-based power devices: Physics, reliability, and perspectives
4. Ultra-compact, High-Frequency Power Integrated Circuits Based on GaN-on-Si Schottky Barrier Diodes
5. Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes;Japanese Journal of Applied Physics;2023-09-01
2. Suppression of Reverse Leakage in Enhancement‐Mode GaN High‐Electron‐Mobility Transistor by Extended PGaN Technology;physica status solidi (a);2023-05-31
3. 2.69 kV/2.11 mΩ⋅cm and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage;IEEE Electron Device Letters;2023-01
4. High Breakdown Electric Field Diamond Schottky Barrier Diode With SnO2 Field Plate;IEEE Transactions on Electron Devices;2022-12
5. A perspective on multi-channel technology for the next-generation of GaN power devices;Applied Physics Letters;2022-05-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3