Effect of conductive atomic force microscope tip loading force on tip-sample interface electronic characteristics: Unipolar to bipolar resistive switching transition-Reference-Cited by-同舟云学术

Effect of conductive atomic force microscope tip loading force on tip-sample interface electronic characteristics: Unipolar to bipolar resistive switching transition

Published:2013-07-29 Issue:5 Volume:103 Page:051604
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Singh Bharti,Varandani Deepak,Mehta B. R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4817380

Reference18 articles.

1. Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

2. Nanoionics-based resistive switching memories

3. The influence of copper top electrodes on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy

4. CAFM investigations of filamentary conduction in Cu2O ReRAM devices fabricated using stencil lithography technique

5. Nanoscale resistive switching in SrTiO3 thin films

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