Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory-Reference-Cited by-同舟云学术

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

Published:2008-03-05 Issue:5 Volume:20 Page:924-928
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Ahn S.-E.,Lee M.-J.,Park Y.,Kang B. S.,Lee C. B.,Kim K. H.,Seo S.,Suh D.-S.,Kim D.-C.,Hur J.,Xianyu W.,Stefanovich G.,Yin H.,Yoo I.-K.,Lee J.-H.,Park J.-B.,Baek I.-G.,Park B. H.

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference32 articles.

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2. A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre

3. A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories

4. Memory technology for the post CMOS era

5. Electronically Configurable Molecular-Based Logic Gates

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