Ion Beam-Mediated Defect Engineering in TiOx Thin Films for Controlled Resistive Switching Property and Application-Reference-Cited by-同舟云学术

Ion Beam-Mediated Defect Engineering in TiOx Thin Films for Controlled Resistive Switching Property and Application

Published:2021-08-17 Issue:9 Volume:3 Page:3804-3814
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Hasina Dilruba¹²^ORCID,Kumar Mohit³,Singh Ranveer¹²,Mollick Safiul Alam⁴,Mitra Anirban⁵,Srivastava Sanjeev Kumar⁶,Luong Minh Anh⁷,Som Tapobrata¹²^ORCID

Affiliation:

1. SUNAG Laboratory, Institute of Physics, Sachivalaya Marg, Bhubaneswar, Odisha 751 005, India

2. Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400 094, India

3. Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea

4. Rabindra Mahavidyalaya, University of Burdwan, Hooghly, West Bengal 712 401, India

5. Department of Physics, Indian Institute of Technology Roorkee, Kharagpur, West Bengal 721 302, India

6. Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal 721 302, India

7. CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse, France

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00417

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