Density functional tight binding study of β-Ga2O3: Electronic structure, surface energy, and native point defects-Reference-Cited by-同舟云学术

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Density functional tight binding study of β-Ga2O3: Electronic structure, surface energy, and native point defects

Published:2019-05-07 Issue:17 Volume:150 Page:174706
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:J. Chem. Phys.

Author:

Lee Jonghoon¹²^ORCID,Ganguli Sabyasachi¹,Roy Ajit K.¹,Badescu Stefan C.³

Affiliation:

1. Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA

2. Universal Technology Corporation, 1270 N. Fairfield Rd., Dayton, Ohio 45432, USA

3. Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA

Funder

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5088941

Reference25 articles.

1. Crystal Structure of β‐Ga2O3

2. Gallium oxide thin films: A new material for high-temperature oxygen sensors

3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

4. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

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1. Photochemical wet etching of (0 0 1) plane ß-phase Ga2O3, and its anisotropic etching behavior;Applied Surface Science;2024-08

2. Surface two-dimensional hole gas in Si doped β-Ga2O3 thin film;Journal of Alloys and Compounds;2024-01

3. Planar vs Non-Planar Orientation in AuAg-Catalyzed InP Nanowire Growth;Crystal Growth & Design;2023-08-22

4. Multimodal microscopy of extended defects in β-Ga2O3 (010) EFG crystals;AIP Advances;2023-07-01

5. Library of intrinsic defects in β-Ga2O3: First-principles studies;Materials Today Communications;2023-06

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