Library of intrinsic defects in β-Ga2O3: First-principles studies-Reference-Cited by-同舟云学术

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Library of intrinsic defects in β-Ga2O3: First-principles studies

Published:2023-06 Issue: Volume:35 Page:105898
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Huang Yuanting,Xu Xiaodong,Yang Jianqun,Yu Xueqiang,Wei Yadong,Ying Tao,Liu Zhongli,Jing Yuhang,Li Weiqi,Li Xingji

Funder

China Postdoctoral Science Foundation

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference62 articles.

1. A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism

2. Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3substrates with crystal defects

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First Principles Investigations on the Carbon‐Related Defects in Silicon;physica status solidi (b);2024-07-31

2. Defect Identification in β-Ga₂O₃ Schottky Barrier Diodes With Electron Radiation and Annealing Regulating;IEEE Transactions on Nuclear Science;2024-05

3. Effects of temperature and charged vacancies on electronic and optical properties of β-Ga₂O₃ after radiation damage;Optics Express;2023-11-16

4. Identification of intrinsic defects and hydrogen passivation in InP using hybrid functional;Journal of Applied Physics;2023-09-19

5. First‐Principles Study of the Influences of Point Vacancies (V_Ga, H_i) on the Photocatalytic and Magnetic Performance of Ga₂O₃:Li/Na/K Systems;physica status solidi (b);2023-09-13

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