A radiation-hardening Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor for harsh electronics

Author:

Wang Jingjuan1,Ren Deliang1,Zhang Zichang2,Xiang Hongwen3,Zhao Jianhui1,Zhou Zhenyu1,Li Xiaoyan1,Wang Hong1,Zhang Lei1,Zhao Mengliu1,Fang Yuxiao45,Lu Chao2,Zhao Chun45,Zhao Ce Zhou45,Yan Xiaobing16

Affiliation:

1. Key Laboratory of Digital Medical Engineering of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photovoltaic Devices, Research Center of Machine Vision Engineering of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, People's Republic of China

2. Electrical and Computer Engineering Department, Southern Illinois University Carbondale, 1230 Lincoln Drive, Carbondale, Illinois 62901, USA

3. Beijing Institute of Space System Engineering, Beijing 100086, China

4. Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China

5. Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, United Kingdom

6. Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore 117576

Funder

2018 School level Innovation Program of Hbbei University

Insititute of Baoding Nanyang Research-New Material Techonlogy Platform

National Natural Science Foundation of China

Outstanding Youth Cultivation Project of Hebei Province

Outstanding Youth Project of University in Hebei Province

Project of distinguished young of Hebei province

Project of Science and Technology activities for Overseas Researcher

Top-notch Youth Project of University in Hebei Province

Training Program of Innovation and Entrepreneurship for Undergraduates

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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