Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations-Reference-Cited by-同舟云学术

Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations

Published:2017-07-14 Issue:2 Volume:122 Page:024301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Thamankar R.¹²,Puglisi F. M.³,Ranjan A.¹^ORCID,Raghavan N.¹,Shubhakar K.¹,Molina J.⁴,Larcher L.⁵⁶,Padovani A.⁶^ORCID,Pavan P.³^ORCID,O'Shea S. J.⁷,Pey K. L.¹^ORCID

Affiliation:

1. Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore

2. School of Advanced Sciences, VIT University, Vellore, Tamil Nadu 632014, India

3. DIEF, Università di Modena e Reggio Emilia, Via P. Vivarelli 10/1, Modena 41125, Italy

4. National Institute of Astrophysics, Optics and Electronics, Tonantzintla, Puebla, Mexico

5. DISMI–Università di Modena e Reggio Emilia, Via Amendola 2, Reggio Emilia 42122, Italy

6. MDLab s.r.l. - Località Grand Chemin 30, Saint-Christophe, Aosta 11020, Italy

7. Institute of Materials Research and Engineering (IMRE), A*STAR, 2 Fusionopolis Way, Singapore 138634

Funder

SUTD-ZJU Research Collaboration Grant

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4991002

Reference49 articles.

1. High-κ/Metal Gate Science and Technology

2. High dielectric constant oxides

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