ALD for Advanced Logic, Memory, Sensing and Quantum Technologies
Author:
Affiliation:
1. National Institute for Astrophysics, Optics and Electronics,Electronics Department, Microelectronics Group,Santa Maria Tonantzintla,Puebla,Mexico
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9908144/9907765/09908229.pdf?arnumber=9908229
Reference12 articles.
1. Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments;molina;Complexity,2017
2. Accurate modeling of gate tunneling currents in Metal-Insulator-Semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3 and post-metallization annealing
3. Rectifying Characteristics of Resonant Tunneling MIS Devices Using Ultra-Thin High-k Oxides Deposited by ALD
4. Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO 2 and fabricated at low temperature
5. Resonant tunneling MIIIS diode based on intrinsic quantum-well formation of ultra-thin atomic layered films after band-offset engineering
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