Spatially Controlled Generation and Probing of Random Telegraph Noise in Metal Nanocrystal Embedded HfO<sub>2</sub> Using Defect Nanospectroscopy-Reference-Cited by-同舟云学术

Spatially Controlled Generation and Probing of Random Telegraph Noise in Metal Nanocrystal Embedded HfO₂ Using Defect Nanospectroscopy

Published:2022-07-19 Issue:8 Volume:4 Page:3909-3921
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Ranjan Alok¹^ORCID,Puglisi Francesco Maria²^ORCID,Molina-Reyes Joel³^ORCID,Pavan Paolo²,O’Shea Sean J.⁴^ORCID,Raghavan Nagarajan¹^ORCID,Pey Kin Leong¹^ORCID

Affiliation:

1. Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487 372

2. DIEF − Università di Modena e Reggio Emilia, Via P. Vivarelli 10/1, Modena 41125, Italy

3. Electronics Department, National Institute of Astrophysics, Optics and Electronics, Puebla 72840, Mexico

4. Institute of Materials Research and Engineering, Agency for Science Technology and Research, 2 Fusionopolis Way, Singapore 138 634

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00559

Reference62 articles.

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2. (Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare

3. Raghavan, N.; Degraeve, R.; Goux, L.; Fantini, A.; Wouters, D. J.; Groeseneken, G.; Jurczak, M. RTN insight to filamentary instability and disturb immunity in ultra-low power switching HfOx and AlOx RRAM. 2013 Symposium on VLSI Technology 2013, pp T164–T165.

4. Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise

5. Reliability of analog resistive switching memory for neuromorphic computing

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