Mott type variable range hopping conduction and magnetoresistance in p-type CuIn3Te5 semiconductor compound-Reference-Cited by-同舟云学术

Mott type variable range hopping conduction and magnetoresistance in p-type CuIn3Te5 semiconductor compound

Published:2017-07-07 Issue:1 Volume:122 Page:015702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Essaleh L.¹^ORCID,Wasim S. M.²,Marín G.³,Rincón C.²,Amhil S.¹,Galibert J.⁴

Affiliation:

1. Laboratory of Condensed Matter and Nanostructures (LMCN), Department of Applied Physics, Faculty of Sciences and Technology, Cadi-Ayyad University, Marrakech, Morocco

2. Centro de Estudios de Semiconductores, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela

3. Laboratorio de Estructura e Ingeniería de MaterialesNanoestructurados (LEIMN), Centro de Investigación y Tecnología de Materiales (CITeMa), InstitutoVenezolano de InvestigacionesCientíficas (IVIC), Maracaibo 4011, Venezuela

4. Laboratoire National des Champs Magnétiques Intenses, LNCMI-EMFL, CNRS/INSA/UGA/UPS, Toulouse & Grenoble, France

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference37 articles.

1. Microstructural and optical properties of CuIn3Te5 thin films for solar cells

2. Optical absorption and photoluminescence spectra of the ordered defect compound CuIn3Te5

3. Crystal growth and structural, electrical, and optical characterization of CuIn3Te5 and CuGa3Te5 ordered vacancy compounds

4. Raman spectra of CuInTe2, CuIn3Te5, and CuIn5Te8 ternary compounds

5. L. S. Palatnik and E. I. Rogacheva , Sov. Phys. Dokl. 12, 503 (1967).

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