Hopping Conductivity in p-Type CuIn3Te5: A Critical Revisit
Author:
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s11664-023-10717-y.pdf
Reference31 articles.
1. T. Mise and T. Nakada, Low temperature growth and properties of Cu-In-Te based thin films for narrow bandgap solar cells. Thin Solid Films 518, 5604 (2010).
2. A. Kosuga, R. Higashine, T. Plirdpring, M. Matsuzawa, K. Kurosaki, and S. Yamanaka, Effects of the defects on the thermoelectric properties of Cu-In-Te chalcopyrite-related compounds. Jpn. J. Appl. Phys. 51, 121803 (2012).
3. L. Essaleh, S. M. Wasim, In Magnetotransport properties of copper ternaries: New solar cells materials, NATO CCMS Workshop on Smart Materials for Energy, Comunications and Security, Marrakech, Morocco, Dec, 2007; p. 127.
4. T. Mise and T. Nakada, Effects of substrate temperature and film thickness on properties of CuIn3Te5 thin films and solar cells. J. Appl. Phys. 110, 014504 (2011).
5. L. Essaleh, S.M. Wasim, G. Marin, C. Rincon, S. Amhil, and J. Galibert, Mott type variable range hopping conduction and magnetoresistance in p-type CuIn3Te5 semiconductor compound. J. Appl. Phys. 122, 015702 (2017).
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