Effect of Substrate Temperature on Temperature Sensitivity and Magnetoresistance of CrO<sub> <i>x</i> </sub>N<sub> <i>y</i> </sub> Thin Film Cryogenic Sensor-Reference-Cited by-同舟云学术

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Effect of Substrate Temperature on Temperature Sensitivity and Magnetoresistance of CrO_xN_y Thin Film Cryogenic Sensor

Published:2024-08-15 Issue:16 Volume:24 Page:25354-25359
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Shen Yudong¹^ORCID,Li Yanjie¹,Ran Yongpeng¹,Zhu Kanglai¹,Wen Yuntong¹,You Minmin²,Liu Jingquan²^ORCID,Lin Zude²^ORCID

Affiliation:

1. Department of Micro/Nano Electronics, DCI Joint Team, Collaborative Innovation Center of IFSA, Shanghai Jiao Tong University, Shanghai, China

2. National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai, China

Funder

Natural Science Foundation for Young Scientists of Shanxi Province

National Key Research and Development Program of China

Strategic Priority Research Program of Chinese Academy of Sciences

Shanghai Pilot Program for Basic Research—Shanghai Jiao Tong University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/7361/10637303/10579775.pdf?arnumber=10579775

Reference39 articles.

1. Low-Current-Density Magnetic Tunnel Junctions for STT-RAM Application Using MgO$_{{x}}$ N$_{\text{1}-{x}}\,\,({x}=\text{0.57}$ ) Tunnel Barrier

2. Sensitization of silicon by singlet exciton fission in tetracene

3. Structural, electrical, optical, and mechanical characterizations of decorative ZrOxNy thin films

4. High-rate reactive high-power impulse magnetron sputtering of Ta–O–N films with tunable composition and properties

5. Structure and properties of Hf-O-N films prepared by high-rate reactive HiPIMS with smoothly controlled composition

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