Asymmetric distribution of microtwins in a GaAs/Si heterostructure grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103792
Reference15 articles.
1. High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interface
2. Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy
3. Molecular beam epitaxial growth of lattice‐mismatched In0.77Ga0.23As on InP
4. Dislocation reduction in epitaxial GaAs on Si(100)
5. Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate
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1. Estimation of Asymmetrically Distributed Anti-phase Domains Ratio in GaAs/Si(100) Epitaxial Layers Using High Resolution X-Ray Diffraction;Springer Proceedings in Physics;2024
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3. A Structural Characterization of GaAs MBE Grown on Si Pillars;Acta Physica Polonica A;2014-04
4. High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substrates;Journal of Crystal Growth;2013-11
5. The role of vicinal silicon surfaces in the formation of epitaxial twins during the growth of III-V thin films;Journal of Applied Physics;2011-12-15
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