Dielectric, energy storage, and loss study of antiferroelectric-like Al-doped HfO2 thin films-Reference-Cited by-同舟云学术

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Dielectric, energy storage, and loss study of antiferroelectric-like Al-doped HfO2 thin films

Published:2020-11-30 Issue:22 Volume:117 Page:221104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Payne Alexis¹²^ORCID,Brewer Owen³,Leff Asher¹^ORCID,Strnad Nicholas A.¹^ORCID,Jones Jacob L.²^ORCID,Hanrahan Brendan¹^ORCID

Affiliation:

1. Sensors and Electron Devices Directorate, US CCDC Army Research Laboratory, Adelphi, Maryland 20783, USA

2. Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27606, USA

3. Electrical Engineering Department, Rochester Institute of Technology, Rochester, New York 14623, USA

Funder

National Science Foundation

Oak Ridge Associated Universities

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0029706

Reference43 articles.

1. Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

2. Optical and dielectric properties of PbZrO 3 thin films prepared by a sol–gel process for energy-storage application

3. Significantly improved energy storage properties and cycling stability in La-doped PbZrO3 antiferroelectric thin films by chemical pressure tailoring

4. Electric field-induced phase transition and energy storage performance of highly-textured PbZrO3 antiferroelectric films with a deposition temperature dependence

5. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

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