Effects of crystallization mechanism on the electrical characteristics of green continuous-wave-laser-crystallized polycrystalline silicon thin film transistors-Reference-Cited by-同舟云学术

Effects of crystallization mechanism on the electrical characteristics of green continuous-wave-laser-crystallized polycrystalline silicon thin film transistors

Published:2013-07-29 Issue:5 Volume:103 Page:053515
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chou Chia-Hsin,Lee I-Che,Yang Po-Yu,Hu Ming-Jhe,Wang Chao-Lung,Wu Chun-Yu,Chien Yun-Shan,Wang Kuang-Yu,Cheng Huang-Chung

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4812669

Reference24 articles.

1. P-70: Active Matrix OLED Displays Using Simple Poly-Si TFT Process

2. Bridged-Grain Solid-Phase-Crystallized Polycrystalline-Silicon Thin-Film Transistors

3. The Effects of Nanometal-Induced Crystallization on the Electrical Characteristics of Bottom-Gate Poly-Si Thin-Film Transistors

4. A simplified 2-D analytic model for the threshold-voltage of fully depleted short gate-length Si-SOI MESFET's

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