Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels-Reference-Cited by-同舟云学术

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Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels

Published:2022-04-18 Issue: Volume: Page:
ISSN:
Container-title:2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
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Author:

Lee C.-K.¹,Yu P.-H.¹,Ye Y.-J.¹,Li P.-W.¹,Chen K.-M.²,Huang G.-W.²,Lin H.-C.¹

Affiliation:

1. National Yang Ming Chiao Tung University,Institute of Electronics,Hsinchu,Taiwan

2. Taiwan Semiconductor Research Institute (TSRI),Hsinchu,Taiwan

Funder

Ministry of Science and Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9770952/9770961/09771027.pdf?arnumber=9771027

Reference10 articles.

1. A Unique Approach to Generate Self-Aligned T-Gate Transistors in Counter-Doped Poly-Si With High Etching Selectivity and Isotropy

2. A new method for determining the FET small-signal equivalent circuit

3. NiSi salicide technology for scaled CMOS

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