Temperature dependent contactless electroreflectance study of intersubband transitions in a self-assembled InAs/InP (001) quantum dot structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference24 articles.
1. Optical properties of submonolayer InAs/InP quantum dots on vicinal surfaces
2. Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)
3. Wetting layer carrier dynamics in InAs/InP quantum dots
4. Interpretation and modeling of buried InAs quantum dots on GaAs and InP substrates
5. See, for example,Nano-Optoelectronics: Concepts, Physics and Devices, edited by M. Grundmann (Springer, Berlin, 2002) and references therein.
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures;Opto-Electronics Review;2012-01-01
2. Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells;Journal of Applied Physics;2011-01-15
3. Effects of grown-in defects on interdiffusion dynamics in InAs∕InP(001) quantum dots subjected to rapid thermal annealing;Journal of Applied Physics;2008-04-15
4. Intermixing during growth of InAs self-assembled quantum dots in InP: A photoluminescence and tight-binding investigation;Physical Review B;2008-02-29
5. Contactless electroreflectance spectroscopy of inter- and intersub-band transitions in AlInN/GaInN quantum wells;physica status solidi (c);2008-02
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