Contactless electroreflectance spectroscopy of inter- and intersub-band transitions in AlInN/GaInN quantum wells
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference31 articles.
1. Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µ m Intersubband Transition in AlGaN/GaN Quantum Wells
2. Effect of Polarization Field on Intersubband Transition in AlGaN/GaN Quantum Wells
3. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
4. Intersubband absorption in degenerately doped GaN/AlxGa1−xN coupled double quantum wells
5. Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm
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1. Quantum confinement in GaN/AlInN asymmetric quantum wells for terahertz emission and field of optical fiber telecommunications;Journal of Optics;2024-01-20
2. Improvement of intersubband absorption in asymmetric quantum wells based on GaN/AlInN;Physica E: Low-dimensional Systems and Nanostructures;2022-05
3. III-nitride semiconductors for intersubband optoelectronics: a review;Semiconductor Science and Technology;2013-06-21
4. Random approach to determine the broadening of intersubband and interband transitions in (In)GaN/Al(In)N quantum wells;Journal of Physics: Condensed Matter;2010-11-16
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