Extended X-ray absorption fine structure spectroscopy of selenium-hyperdoped silicon-Reference-Cited by-同舟云学术

Extended X-ray absorption fine structure spectroscopy of selenium-hyperdoped silicon

Published:2013-10-07 Issue:13 Volume:114 Page:133507
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Newman Bonna K.,Ertekin Elif,Sullivan Joseph T.,Winkler Mark T.,Marcus Matthew A.,Fakra Sirine C.,Sher Meng-Ju,Mazur Eric,Grossman Jeffrey C.,Buonassisi Tonio

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4824279

Reference42 articles.

1. Infrared absorption by conical silicon microstructures made in a variety of background gases using femtosecond-laser pulses

2. Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon

3. Role of the Background Gas in the Morphology and Optical Properties of Laser-Microstructured Silicon

4. Chalcogen doping of silicon via intense femtosecond-laser irradiation

5. Strong sub-band-gap infrared absorption in silicon supersaturated with sulfur

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