Role of the Background Gas in the Morphology and Optical Properties of Laser-Microstructured Silicon
Author:
Affiliation:
1. Department of Chemistry, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, and Division of Engineering and Applied Science, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cm049029i
Reference17 articles.
1. The effect of dopant diffusion vapor pressure on the properties of sulfur and selenium doped silicon infrared detectors
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4. Multiple photon excited SF6 interaction with silicon surfaces
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