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Crystallization engineering as a route to epitaxial strain control

Published:2015-10 Issue:10 Volume:3 Page:106102
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Akbashev Andrew R.¹,Plokhikh Aleksandr V.¹,Barbash Dmitri¹^ORCID,Lofland Samuel E.²,Spanier Jonathan E.¹³

Affiliation:

1. Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USA

2. Department of Physics, Rowan University, Glassboro, New Jersey 08028, USA

3. Department of Physics, Drexel University, Philadelphia, Pennsylvania 19104, USA

Funder

National Science Foundation (NSF)

Office of Naval Research (ONR)

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4933064

Reference19 articles.

1. Room-temperature ferroelectricity in strained SrTiO3

2. Accelerated Oxygen Exchange Kinetics on Nd2NiO4+δ Thin Films with Tensile Strain along c-Axis

3. Enhancement of Ferroelectricity in Strained BaTiO 3 Thin Films

4. A strong ferroelectric ferromagnet created by means of spin–lattice coupling

5. Observation of the Strain Induced Magnetic Phase Segregation in Manganite Thin Films

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3. Toward a Low-Temperature Route for Epitaxial Integration of BiFeO3 on Si;The Journal of Physical Chemistry C;2019-05-02

4. Crystallization of amorphous complex oxides: New geometries and new compositions via solid phase epitaxy;Current Opinion in Solid State and Materials Science;2018-12

5. Effect of annealing conditions on the electrical properties of ALD-grown polycrystalline BiFeO3 films;Journal of Materials Chemistry C;2018

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