High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition-Reference-Cited by-同舟云学术

High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

Published:2017-12 Issue:12 Volume:7 Page:125018
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Chen Fu¹²³^ORCID,Sun Shichuang¹,Deng Xuguang¹,Fu Kai¹,Yu Guohao¹,Song Liang¹²,Hao Ronghui¹⁴^ORCID,Fan Yaming¹,Cai Yong¹,Zhang Baoshun¹⁵

Affiliation:

1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123, China

4. School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

5. Suzhou Powerhouse Electronics Co., Ltd, Suzhou 215123, China

Funder

The Key Research and Development Program of Jiangsu Province

The National Key Research and Development Program of China

The National Key Scientific Instrument and Equipment Development Projects of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4990099

Reference25 articles.

1. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

2. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

3. Very-high power density AlGaN/GaN HEMTs

4. Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications

5. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

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