Impact‐ionization‐induced transfer of recombination in single‐ and multiple‐monolayer quantum wells of GaInAs/InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106119
Reference18 articles.
1. Optical characterization of interface disorder in multi-quantum well structures
2. Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces
3. Direct observation of extended monolayer flat islands at metalorganic vapor phase epitaxy grown Al0.5Ga0.5As‐GaAs single quantum well interfaces
4. Atomic steps at GaInAs/InP interfaces grown by organometallic vapor phase epitaxy
5. Sharp interfaces in GaInAsP/InP single quantum wells grown by MOVPE
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Defect Related Recombination Processes in II-VI Quantum Wells;Materials Science Forum;1995-11
2. Optically Detected Cyclotron Resonance Studies of CdMnTe/CdTe Multiquantum Wells and CdMgTe/CdMnTe Superlattices;Acta Physica Polonica A;1995-01
3. Low temperature mobility limiting defects in CdTe/CdMnTe multi‐quantum‐well structures;Applied Physics Letters;1994-10-24
4. Optical detection of cyclotron resonance for characterization of recombination processes in semiconductors;Critical Reviews in Solid State and Materials Sciences;1994-01
5. Nonthermal microwave modulation of photoluminescence in III-V semiconductors;Physical Review B;1993-08-15
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