Sharp interfaces in GaInAsP/InP single quantum wells grown by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes
2. High Relaxation Oscillation Frequency (beyond 10 GHz) of GaAlAs Multiquantum Well Lasers
3. Ultralow‐threshold graded‐index separate‐confinement single quantum well buried heterostructure (Al,Ga)As lasers with high reflectivity coatings
4. Recent advances in MOCVD growth of InxGa1-xAsyP1-y alloys
5. Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy
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1. Third-order NLO properties of the DMF solutions of 3-D network and 2-D layered organic–metal polymers with (4, 4) grid units;Inorganica Chimica Acta;2005-03
2. The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films;Surface Science Reports;2004-05
3. Effect of growth interruption on the interface flatness in metalorganic vapor phase epitaxy-grown GaAs/GaAsP heterostructures;Journal of Crystal Growth;1994-12
4. Organometallic vapor phase epitaxial growth of AlP/GaP monolayer superlattice using tertiarybutylphosphine;Applied Physics Letters;1994-10-17
5. Extended, monolayer flat islands and exciton dynamics inGa0.47In0.53As/InP quantum-well structures;Physical Review B;1993-01-15
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