Extended, monolayer flat islands and exciton dynamics inGa0.47In0.53As/InP quantum-well structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.2203/fulltext
Reference8 articles.
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1. Early nucleation stages of low density InAs quantum dots nucleation on GaAs by MOVPE;Journal of Crystal Growth;2016-01
2. Excitons in Semiconductor Nanostructures;Solid State Physics;2003
3. Carrier dynamics in GaAs–Al0.46Ga0.54As superlattice structure grown by molecular beam epitaxy;Optical Materials;2001-06
4. Influence of excitation energy on carrier dynamics in GaAs-Al0.46Ga0.54As superlattice;Semiconductor Science and Technology;2000-08-15
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